switchmode series npn silicon power darlington transistors with base-emitter speedup diode the mj10020 and mj10021 darlington transistors are designed for highvoltage, highspeed, power switching in inductive circuits where fall time is critical. they are particularly suited for line operated switchmode applications such as: ? ac and dc motor controls ? switching regulators ? inverters ? solenoid and relay drivers ? fast turnoff times 150 ns inductive fall time at 25 c (typ) 750 ns inductive storage time at 25 c (typ) ? operating temperature range 65 to +200 c ? 100 c performance specified for: reversed biased soa with inductive loads switching times with inductive loads saturation voltages leakage currents ????????????????????????????????? ????????????????????????????????? maximum ratings ???????????????? ???????????????? rating ?????? ?????? symbol ????? ????? mj10020 ?????? ?????? mj10021 ???? ???? unit ???????????????? ???????????????? collectoremitter voltage ?????? ?????? v ceo ????? ????? 200 ?????? ?????? 250 ???? ???? vdc ???????????????? ???????????????? collectoremitter voltage ?????? ?????? v cev ????? ????? 300 ?????? ?????? 350 ???? ???? vdc ???????????????? ???????????????? emitter base voltage ?????? ?????? v eb ?????????? ?????????? 8.0 ???? ???? vdc ???????????????? ? ?????????????? ? ???????????????? collector current e continuous e peak (1) ?????? ? ???? ? ?????? i c i cm ?????????? ? ???????? ? ?????????? 60 100 ???? ? ?? ? ???? adc ???????????????? ???????????????? base current e continuous e peak (1) ?????? ?????? i b i bm ?????????? ?????????? 20 30 ???? ???? adc ???????????????? ? ?????????????? ? ? ?????????????? ? ???????????????? total power dissipation @ t c = 25 c @ t c = 100 c derate above 25 c ?????? ? ???? ? ? ???? ? ?????? p d ?????????? ? ???????? ? ? ???????? ? ?????????? 250 143 1.43 ???? ? ?? ? ? ?? ? ???? watts w/ c ???????????????? ???????????????? operating and storage junction temperature range ?????? ?????? t j , t stg ?????????? ?????????? 65 to +200 ???? ???? c ????????????????????????????????? ????????????????????????????????? thermal characteristics ???????????????? ???????????????? characteristic ?????? ?????? symbol ?????????? ?????????? max ???? ???? unit ???????????????? ???????????????? thermal resistance, junction to case ?????? ?????? r q jc ?????????? ?????????? 0.7 ???? ???? c/w ???????????????? ? ?????????????? ? ???????????????? maximum lead temperature for soldering purposes: 1/8 from case for 5 seconds ?????? ? ???? ? ?????? t l ?????????? ? ???????? ? ?????????? 275 ???? ? ?? ? ???? c (1) pulse test: pulse width = 5 ms, duty cycle 10%. on semiconductor ? semiconductor components industries, llc, 2001 march, 2001 rev. 2 1 publication order number: mj10020/d 60 ampere npn silicon power darlington transistors 200 and 250 volts 250 watts mj10020 mj10021 case 197a05 to204ae (to3) 100 15
mj10020 mj10021 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ??????????????????? ??????????????????? characteristic ????? ????? symbol ???? ???? min ??? ??? typ ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ??????????????????? ? ????????????????? ? ??????????????????? collectoremitter sustaining voltage (table 1) mj10020 (i c = 100 ma, i b = 0) mj10021 ????? ? ??? ? ????? v ceo(sus) ???? ? ?? ? ???? 200 250 ??? ? ? ? ??? e e ???? ? ?? ? ???? e e ??? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ??????????????????? collector cutoff current (v cev = rated value, v be(off) = 1.5 vdc) (v cev = rated value, v be(off) = 1.5 vdc, t c = 150 c) ????? ? ??? ? ????? i cev ???? ? ?? ? ???? e e ??? ? ? ? ??? e e ???? ? ?? ? ???? 0.25 5.0 ??? ? ? ? ??? madc ??????????????????? ? ????????????????? ? ??????????????????? collector cutoff current (v ce = rated v cev , r be = 50 w , t c = 100 c) ????? ? ??? ? ????? i cer ???? ? ?? ? ???? e ??? ? ? ? ??? e ???? ? ?? ? ???? 5.0 ??? ? ? ? ??? madc ??????????????????? ??????????????????? emitter cutoff current (v eb = 2.0 v, i c = 0) ????? ????? i ebo ???? ???? e ??? ??? e ???? ???? 175 ??? ??? madc ????????????????????????????????? ????????????????????????????????? second breakdown ??????????????????? ??????????????????? second breakdown collector current with base forward biased ????? ????? i s/b ???? ???? ?????? ?????? see figure 13 ??? ??? ??????????????????? ??????????????????? clamped inductive soa with base reverse biased ????? ????? rbsoa ???? ???? ?????? ?????? see figure 14 ??? ??? ????????????????????????????????? ????????????????????????????????? on characteristics (2) ??????????????????? ? ????????????????? ? ??????????????????? dc current gain (i c = 15 adc, v ce = 5.0 v) ????? ? ??? ? ????? h fe ???? ? ?? ? ???? 75 ??? ? ? ? ??? e ???? ? ?? ? ???? 1000 ??? ? ? ? ??? e ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? collectoremitter saturation voltage (i c = 30 adc, i b = 1.2 adc) (i c = 60 adc, i b = 4.0 adc) (i c = 30 adc, i b = 1.2 adc, t c = 100 c) ????? ? ??? ? ? ??? ? ????? v ce(sat) ???? ? ?? ? ? ?? ? ???? e e e ??? ? ? ? ? ? ? ??? e e e ???? ? ?? ? ? ?? ? ???? 2.2 4.0 2.4 ??? ? ? ? ? ? ? ??? vdc ??????????????????? ? ????????????????? ? ? ????????????????? ? ??????????????????? baseemitter saturation voltage (i c = 30 adc, i b = 1.2 adc) (i c = 30 adc, i b = 1.2 adc, t c = 100 c) ????? ? ??? ? ? ??? ? ????? v be(sat) ???? ? ?? ? ? ?? ? ???? e e ??? ? ? ? ? ? ? ??? e e ???? ? ?? ? ? ?? ? ???? 3.0 3.5 ??? ? ? ? ? ? ? ??? vdc ??????????????????? ??????????????????? diode forward voltage (i f = 30 adc) ????? ????? v f ???? ???? e ??? ??? 2.5 ???? ???? 5.0 ??? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ??????????????????? ? ????????????????? ? ??????????????????? output capacitance (v cb = 10 vdc, i e = 0, f test = 1.0 khz) ????? ? ??? ? ????? c ob ???? ? ?? ? ???? 175 ??? ? ? ? ??? e ???? ? ?? ? ???? 700 ??? ? ? ? ??? pf ????????????????????????????????? ????????????????????????????????? switching characteristics ????????????????????????????????? ????????????????????????????????? resistive load (table 1) ??????? ??????? delay time ????????????? ????????????? ????? ????? t d ???? ???? e ??? ??? 0.02 ???? ???? 0.2 ??? ??? m s ??????? ??????? rise time ????????????? ????????????? (v cc = 175 vdc, i c = 30 a, i b1 = adc v be( ff) =50v t =25 m s ????? ????? t r ???? ???? e ??? ??? 0.30 ???? ???? 1.0 ??? ??? m s ??????? ??????? storage time ????????????? ????????????? i b1 = adc, v be(off) = 5.0 v, t p = 25 m s duty cycle 2.0%). ????? ????? t s ???? ???? e ??? ??? 1.0 ???? ???? 3.5 ??? ??? m s ??????? ??????? fall time ????????????? ????????????? duty cycle 2.0%). ????? ????? t f ???? ???? e ??? ??? 0.07 ???? ???? 0.5 ??? ??? m s ????????????????????????????????? ????????????????????????????????? inductive load, clamped (table 1) ??????? ??????? storage time ????????????? ????????????? i cm = 30 a(pk), v cem = 200 v, i b1 = 1.2 a, ????? ????? t sv ???? ???? e ??? ??? 1.2 ???? ???? 3.5 ??? ??? m s ??????? ??????? crossover time ????????????? ????????????? i cm 30 a( k) , v cem 200 v , i b1 1 . 2 a , v be(off) = 5 v, t c = 100 c) ????? ????? t c ???? ???? e ??? ??? 0.45 ???? ???? 2.0 ??? ??? m s ??????? ??????? storage time ????????????? ????????????? (i 30 a( k) v 200 v i 12a ????? ????? t sv ???? ???? e ??? ??? 0.75 ???? ???? e ??? ??? m s ??????? ??????? crossover time ????????????? ????????????? (i cm = 30 a(pk), v cem = 200 v, i b1 = 1.2 a, v be(off) = 5 v , t c = 25 c ) ????? ????? t c ???? ???? e ??? ??? 0.25 ???? ???? e ??? ??? m s ??????? ??????? fall time ????????????? ????????????? v be(off) = 5 v , t c = 25 c) ????? ????? t fi ???? ???? e ??? ??? 0.15 ???? ???? e ??? ??? m s (1) pulse test: pw = 300 m s, duty cycle 2%.
mj10020 mj10021 http://onsemi.com 3 , collector current (a) m i c v be , base-emitter voltage (volts) v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) 0.2 0.4 6.0 8.0 10 20 100 0.1 40 60 80 2.0 1000 figure 1. dc current gain i c , collector current (amps) 2.0 3.0 5.0 7.0 10 20 100 500 70 50 0.1 figure 2. collector saturation region i c , collector current (amps) 10 2.1 1.8 0.9 0.6 figure 3. collectoremitter saturation voltage i c , collector current (amps) 5.0 0.01 figure 4. baseemitter voltage i b , base current (amps) 0.1 10 4.5 0.5 700 h fe , dc current gain v ce = 5.0 v 30 0.3 i c = 1.0 a t j = 25 c t j = 100 c 3.0 v r , reverse voltage (volts) 20 100 1000 -0.2 figure 5. collector cutoff region v be , base-emitter voltage (volts) 10 2 10 1 10 -1 figure 6. output capacitance 10 4 100 10 3 10 0 0 +0.2 +0.4 +0.8 v ce = 250 v t j = 125 c = 10 a 100 c 75 c 25 c t j = 25 c c, capacitance (pf) 100 200 10 20 1.0 30 50 70 t j = 25 c 3.0 5.0 7.0 20 100 30 50 70 +0.6 700 500 300 200 300 200 70 50 30 10 7.0 5.0 t j = 100 c t j = 25 c i c /i b = 25 = 30 a = 60 a t j = 100 c t j = 25 c 5.0 2.0 1.0 0.5 0.2 0.02 0.05 4.0 3.5 3.0 2.5 2.0 1.5 1.0 1.2 1.5 2.4 2.7 3.0 2.1 1.8 0.9 0.6 0.3 1.2 1.5 2.4 2.7 3.0 i c /i b = 25 3.0 0.3 typical electrical characteristics
mj10020 mj10021 http://onsemi.com 4 table 1. test conditions for dynamic performance v ceo(sus) rbsoa and inductive switching resistive switching input conditions circuit values test circuits l coil = 10 mh, v cc = 10 v r coil = 0.7 w v clamp = v ceo(sus) l coil = 180 m h r coil = 0.05 w v cc = 20 v v cc = 175 v r l = 5.6 w pulse width = 25 m s inductive test circuit turnon time i b1 adjusted to obtain the forced h fe desired turnoff time use inductive switching driver as the input to the resistive test circuit. t 1 adjusted to obtain i c test equipment scope e tektronix 475 or equivalent resistive test circuit output waveforms i b1 1 2 pw varied to attain i c = 100 ma 20 w 1 5 v 0 2 1 input 2 r coil l coil v cc v clamp rs = 0.1 w 1n4937 or equivalent tut see above for detailed conditions 1 2 tut r l v cc t 1 l coil (i cm ) v cc t 2 l coil (i cm ) v clamp t 1 i cm t f clamped t f t t v clamp t 2 time v cem *adjust v such that v be(off) = 5 v except as required for rbsoa (figure 14).
mj10020 mj10021 http://onsemi.com 5 t c , crossover time (s) m t fi t rv i c v ce 90% i b1 i cm v cem 90% v cem 90% i cm 10% i cm 2% i c i b t sv t ti t c figure 7. inductive switching measurements time figure 8. typical peak reverse base current 10 0 v be(off) , base-emitter voltage (volts) 0 1.0 2.0 3.0 4.0 8.0 7.0 5.0 3.0 i b2(pk) , base current (amps) i c = 30 a i b1 = 1.2 a v clamp = 200 v t j = 25 c 9.0 8.0 6.0 4.0 2.0 1.0 7.0 6.0 5.0 figure 9. typical inductive switching times 3.2 0 v be(off) , base-emitter voltage (volts) 0 1.0 2.0 3.0 4.0 8.0 2.0 1.6 1.2 i cm = 30 a i c /i b = 25 2.8 2.4 0.8 0.4 7.0 6.0 5.0 2.4 1.5 1.2 0.9 2.1 1.8 0.6 0.3 t sv @ 100 c t sv @ 25 c t c @ 100 c t c @ 25 c , voltage storage time (s) m t sv v clamp 10% v cem
mj10020 mj10021 http://onsemi.com 6 switching times note in resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. however, for inductive loads which are common to switchmode power supplies and hammer drivers, current and voltage waveforms are not in phase. therefore, separate measurements must be made on each waveform to determine the total switching time. for this reason, the following new terms have been defined. t sv = voltage storage time, 90% i b1 to 10% v cem t rv = voltage rise time, 1090% v cem t fi = current fall time, 9010% i cm t ti = current tail, 102% i cm t c = crossover time, 10% v cem to 10% i cm an enlarged portion of the inductive switching waveforms is shown in figure 7 to aid in the visual identity of these terms. for the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from an222a: p swt = 1/2 v cc i c (t c ) f in general, t rv + t fi t c . however, at lower test currents this relationship may not be valid. as is common with most switching transistors, resistive switching is specified at 25 c and has become a benchmark for designers. however, for designers of high frequency converter circuits, the user oriented specifications which make this a aswitchmodeo transistor are the inductive switching speeds (t c and t sv ) which are guaranteed at 100 c. figure 10. typical turnon switching times i c , collector current (amps) 2.0 3.0 5.0 7.0 10 20 60 figure 11. typical turnoff switching times i c , collector current (amps) t, time (s) m t, time (s) m figure 12. thermal response t, time (ms) 1.0 0.01 0.1 0.1 r(t), transient thermal 1.0 10 100 1000 0 r q jc (t) = r q jc r q jc (t) = 0.7 c/w max determine t 2 for power pulse and read r(t) t j(pk) = t c + p (pk) r q jc (t) p (pk) t 1 single pulse resistance (normalized) 1000 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 t f v cc = 175 v i c /i b = 25 v be(off) = 5 v t j = 25 c v cc = 175 v i c /i b = 25 t j = 25 c t s t d t r 40 0.6 0.8 1.0 2.0 3.0 5.0 7.0 10 20 6 0 40 0.6 0.81.0 resistive switching
mj10020 mj10021 http://onsemi.com 7 the safe operating area figures shown in figures 13 and are specified for these devices under the test conditions shown. i cm 100 figure 13. maximum forward bias safe operating area v ce , collector-emitter voltage (volts) 2.0 5.0 10 20 50 300 10 1.0 0 figure 14. maximum rbsoa, reverse bias safe operating area v cem , collector-emitter voltage (volts) 50 150 250 40 100 t c = 25 c 80 60 20 i c /i b 25 25 c t j 100 c , peak collector current (amps) 100 200 250 0.1 0.01 dc 1 ms i c , collector current (amp) 100 200 300 30 70 50 10 90 0 turn-off load line boundary for mj10021 the locus for mj10020 is 50 v less 10 m s 100 m s 1.0 bonding wire limit thermal limit (single pulse) second breakdown limit v be(off) = 5 v v be(off) = 0 v v be(off) = 2 v safe operating area information forward bias there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 13 is based on t c = 25 c; t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated when t c 25 c. second breakdown limitations do not derate the same as thermal limitations. allowable current at the voltages shown on figure 13 may be found at any case temperature by using the appropriate curve on figure 15. t j(pk) may be calculated from the data in figure 12. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. reverse bias for inductive loads, high voltage and high current must be sustained simultaneously during turnoff, in most cases, with the base to emitter junction reverse biased. under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. this can be accomplished by several means such as active clamping, rc snubbing, load line shaping, etc. the safe level for these devices is specified as reverse bias safe operating area and represents the voltagecurrent condition allowable during reverse biased turnoff. this rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. figure 14 gives the rbsoa characteristics. 0 figure 15. power derating t c , case temperature ( c) 40 80 120 40 0 100 power derating factor (%) 80 60 20 200 second breakdown derating 160 thermal derating
mj10020 mj10021 http://onsemi.com 8 package dimensions case 197a05 to204ae (to3) issue j notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. style 1: pin 1. base 2. emitter case: collector dim min max min max millimeters inches a 1.530 ref 38.86 ref b 0.990 1.050 25.15 26.67 c 0.250 0.335 6.35 8.51 d 0.057 0.063 1.45 1.60 e 0.060 0.070 1.53 1.77 g 0.430 bsc 10.92 bsc h 0.215 bsc 5.46 bsc k 0.440 0.480 11.18 12.19 l 0.665 bsc 16.89 bsc n 0.760 0.830 19.31 21.08 q 0.151 0.165 3.84 4.19 u 1.187 bsc 30.15 bsc v 0.131 0.188 3.33 4.77 a n e c k t seating plane 2 pl d m q m 0.30 (0.012) y m t m y m 0.25 (0.010) t q y 2 1 l g b v h u on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mj10020/d switchmode is a trademark of semiconductor components industries, llc. north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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